Archive for the “Semiconductors” Category

San Diego CA, USA –Surface Optics’ ET10 measures emissivity values in two most commonly used spectral regions, 3 to 5 and 8 to 12 microns.

Its main application is to produce emissivity values for the infrared cameras.

Advanced IR cameras require the input of an emissivity value for accurate temperature calculations. The emissivity values obtained from tables can be far from real leading to large temperature uncertainties.

The ET10 can be used in the lab or in the field and on small or large objects. With the ET10 one can measure emissivity of any surface in just a few seconds.

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PJ Hesketh, JN Zemel, B Gebhart - Physical Review B, 1988 - APS Polarized spectral emittance from periodic micromachined surfaces. II. VOLUME 37, NUMBER 18

From the Abstract:The polarized directional spectral (3 um <=lambda =>14um) emittances (PDSE’s) of highly doped, micromachined, periodic structures on silicon were measured…

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Peter J. Hesketh, Jay N. Zemel & Benjamin Gebhart ; Physical Review B.37.10795
VOLUME 37, NUMBER 18 1988

From the Abstract: The normal, polarized spectral (3 um <=lambda =>14um) emittances of highly doped, micromachined, periodic structures on heavily phosphorus-doped (110) silicon ([P]?5×1019 cm-3) were measured for …..

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By: Hunter, A.; Adams, B.; Ramanujam, R.
Advanced Thermal Processing of Semiconductors, 2003. RTP 2003. 11th IEEE International Conference on RTP
Volume , Issue , 23-26 Sept. 2003 Page(s): 85 - 88
Digital Object Identifier 10.1109/RTP.2003.1249127
Summary:

The design of an integrating reflectometer specific to the optical and spectral requirements of rapid thermal processing (RTP) is discussed. We report reflectance measurements of various materials. These measurements are correlated to in-situ emittance measurements recorded during rapid thermal processing. We also present the design of an optimized emissometer for an RTP chamber. We propose a means for correlating room temperature reflectance measurements to emittance standards for RTP.

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